| PART |
Description |
Maker |
| ADLS15HD ADLS15HD-16N ADLS15HD-11N |
Intel Atom Z5xx 1.1GHz - 1.6GHz, US15W SCH
|
Advanced Digital Logic, Inc.
|
| DC812A DC812A-15 |
SCH LTC2606CDD 16 BIT RAIL TO RAIL VOUT DAC I2C INTERFACE
|
Linear Technology
|
| RURD620S FN3640 RURD620 |
6A/ 200V Ultrafast Diodes
Mechanism, high speeed, 3-inch ELM w/low profile cutter, one tab 6 A, 200 V, SILICON, RECTIFIER DIODE, TO-251
6A 200V Ultrafast Diodes
From old datasheet system
6A, 200V Ultrafast Diodes
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| CDBB5200-HF |
Halogen Free Schottky Barrier Diodes, V-RRM=200V, V-R=200V, I-O=5A
|
Comchip Technology
|
| OM6039SM |
200V , 9 Amp, N-Channel Power MOSFET(200V , 9A,N沟道，功率MOS场效应管) 00V安培，N沟道功率MOSFET（为200V9A条，沟道，功率马鞍山场效应管
|
HIROSE ELECTRIC Co., Ltd.
|
| IRF240 |
200V Single N-Channel Hi-Rel MOSFET in a TO-204AE package
HEXFET?TRANSISTORS 200V, N-CHANNEL
REPETITIVE AVALANCHE AND dv/dt RATED
|
IRF[International Rectifier]
|
| IRFS250 IRFS250B IRFS250BFP001 |
200V N-Channel B-FET / Substitute of IRFS250 & IRFS250A
200V N-Channel MOSFET
|
Fairchild Semiconductor
|
| MRF6S9060NR1 MRF6S9060MR1 MRF6S9060NBR1 MRF6S9060M |
RF Power Field Effect Transistors
CAP 10PF 200V 200V X7R RAD.20 .20X.20 BULK P-MIL-PRF-39014
CAP CER .10UF 100V 20% AXIAL
|
Freescale (Motorola)
飞思卡尔半导体(中国)有限公司
|
| IRFW630 IRFW630B IRFI630 IRFI630B IRFI630BTUFP001 |
200V N-Channel B-FET / Substitute of IRFI630A
200V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRF9610S IRF9610STRL IRF9610STRR |
-200V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=-200V, Rds(on)=3.0ohm, Id=-1.8A)
Power MOSFET(Vdss=-200V/ Rds(on)=3.0ohm/ Id=-1.8A)
CAP 3.9PF 50V /-0.1PF C0G SMD-0402 TR-7-PA SN100 HIGH-FREQ 功率MOSFET（减振钢板基本\u003d-00V，的Rds（on）\u003d 3.0ohm，身份证\u003d- 1.8A
|
IRF[International Rectifier]
International Rectifier, Corp.
|
